DMN6069SFG-13

$0.17

Description：MOSFET N-CH 60V 5.6A POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5361b4ba6c8e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 5.6A POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：5.6A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：930mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN6069SFG-13

Overview

The DMN6069SFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and utilizes the PowerDI3333-8 surface-mount package. The device offers a typical static drain-source on-resistance (RDS(ON)) of 50mΩ at VGS=10V and 63mΩ at VGS=4.5V. Continuous drain current ratings are specified as 18A at TC=+25°C and 5.6A at TA=+25°C. Total gate charge (QG) reaches a maximum of 25nC at VGS=10V, with turn-on delay time up to 10ns and fall time up to 10ns.

Feature Summary

Low RDS(ON) minimizes on-state losses for high efficiency power management applications.
Small form factor thermally efficient PowerDI package enables higher density end products.
Occupies significantly less board area compared to SO-8 packages.
Qualified to AEC-Q101 standards for automotive reliability.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as defined by the manufacturer's green product standards. Ensure the application environment remains within the specified operating temperature range of -55°C to +150°C junction temperature.

Selection Notes

Select this component when a compact footprint is required alongside low conduction losses in 60V systems. The PowerDI3333-8 package provides thermal advantages over traditional plastic packages while maintaining small board space. Consider the gate charge and switching times for high-frequency operation requirements in DC-DC converter designs.

Part Context

This part belongs to the DMN6069 series of N-channel MOSFETs from Diodes Incorporated. The series focuses on minimizing on-resistance while maintaining superior switching performance. The DMN6069SFG variant specifically utilizes the PowerDI3333-8 case style, distinguishing it from other package options like SOT-223 or standard DFN variants within the broader family.

Replacement Considerations

DMN6069SFG-7 is an equivalent part number within the same series, differing only in the reel quantity (2,000 units versus 3,000 units). Both share identical electrical characteristics and mechanical specifications.