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Product Detailed Parameters
- Description：MOSFET N-CH 60V 5.6A POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5.6A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：930mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN6069SFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 surface-mount package and operates with a drain-source voltage of 60V. The device provides a continuous drain current of 18A at case temperature of +25°C, with a maximum on-resistance of 50mΩ at VGS=10V and 63mΩ at VGS=4.5V. Total power dissipation reaches 0.93W in steady-state ambient conditions and 2.4W when thermally biased to the bottom layer. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications
- Utilizes a small form factor thermally efficient PowerDI package that occupies only 33% of the board area compared to SO-8 packages
- Qualified to AEC-Q101 standards for automotive-grade high reliability requirements
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging configuration. Confirm compliance with RoHS directives and halogen-free specifications as defined by the manufacturer's green product guidelines. Ensure the application environment remains within the specified thermal limits for the FR-4 substrate mounting conditions described in the datasheet.
Selection Notes
Select this component for designs requiring low conduction losses and compact footprint integration. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient temperature constraints. Consider the gate charge parameters for driving circuit compatibility and switching frequency optimization in power conversion topologies.
Part Context
This part belongs to the DMN6069 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series utilizes silicon technology and is housed in the PowerDI3333-8 case style. The product line targets high-density electronic end products where space efficiency and thermal performance are critical design factors.
Replacement Considerations
The DMN6069SFG-13 serves as an equivalent alternative offering identical electrical characteristics but packaged in a 3,000-unit tape and reel format.
