DMN6069SFGQ-13

$0.96

Description：MOSFET N-CH 60V 18A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1737b71189f5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 18A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

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DMN6069SFGQ-13

Overview

The DMN6069SFGQ-13 is a single N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a 60V drain-source voltage rating and a maximum continuous drain current of 18A at case temperature of +25°C. The device offers a typical on-resistance of 39mΩ at VGS=10V and 47mΩ at VGS=4.5V. Total gate charge is typically 25nC at VGS=10V. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Low on-state resistance minimizes conduction losses for high efficiency power management.
PowerDI3333-8 package provides thermal efficiency and occupies significantly less board area than SO-8 packages.
Qualified to AEC-Q101 standards with PPAP capability for automotive reliability requirements.

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as specified by the manufacturer's green product definitions. Ensure the application environment remains within the rated thermal and electrical limits defined in the datasheet.

Selection Notes

Select this component when a compact surface-mount solution is required for low-voltage switching applications. The PowerDI3333-8 form factor supports higher density designs compared to traditional leaded packages. Consider the thermal resistance characteristics and available PCB copper area for heat dissipation during steady-state operation.

Part Context

This part belongs to the Diodes Incorporated DMN6069 series of N-channel MOSFETs. It utilizes silicon technology and is housed in the PowerDI3333-8 surface mount package. The device is designed to balance low on-resistance with superior switching performance for efficient power conversion.