DMN6070SSD-13

Overview

The DMN6070SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 60 V and a gate-source voltage (VGSS) rating of ±20 V. The device provides a maximum static drain-source on-resistance (RDS(on)) of 80 mΩ at VGS = 10 V and 100 mΩ at VGS = 4.5 V. Continuous drain current (ID) reaches 3.3 A at +25°C and 4.1 A for short durations. Total power dissipation is rated at 1.5 W, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration integrated into a single SO-8 package
• Optimized for low on-state resistance while maintaining fast switching performance
• Qualified to AEC-Q101 standards for high reliability applications

Applications

• Backlighting circuits
• Power management functions
• DC-DC converters

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS36342 Rev. 3-2. Confirm that the marking code matches 'N6070SD' and the date code format corresponds to YYWW. Ensure the package type is strictly SO-8 and the material composition meets RoHS and halogen-free requirements as specified in the manufacturer's documentation.

Selection Notes

Select this component when a dual N-channel solution is required within a compact SO-8 footprint. The 60 V rating suits low-voltage power systems. Evaluate thermal constraints carefully, as steady-state power dissipation is limited to 1.5 W. Consider the specific RDS(on) values at your intended gate drive voltage (4.5 V or 10 V) to ensure efficiency targets are met.

Part Context

This part belongs to the DMN60 series of dual N-channel MOSFETs from Diodes Incorporated. It shares the SO-8 mechanical outline with other devices in the family but differs in electrical ratings such as breakdown voltage and on-resistance. The '-13' suffix indicates tape and reel packaging containing 2,500 units per reel.

Replacement Considerations

Public confirmed substitute part numbers: None.