DMN6140L-13

$0.18

Description：MOSFET N-CH 60V 1.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1ad8c38491e1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 1.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：140mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：315 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN6140L-13

Overview

The DMN6140L-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 60 V and a gate-source voltage (VGS) rating of ±20 V. The device offers a maximum on-resistance (RDS(on)) of 140 mΩ at VGS = 10 V and 170 mΩ at VGS = 4.5 V. Continuous drain current (ID) is rated at 2.3 A at +25°C. Total gate charge (Qg) is typically 8.6 nC at VGS = 10 V. The component operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-23 package.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance.
Maintains superior switching performance characteristics alongside low input capacitance.
Qualified to AEC-Q101 standards for high reliability automotive applications.
Totally lead-free, fully RoHS compliant, and halogen/antimony free.

Applications

DC-DC Converters
Power Management Functions
Analog Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the required voltage and current ratings align with the system's operational limits. Ensure compliance with environmental directives such as RoHS 2 if applicable to the final assembly. Check for any recent datasheet revisions that may impact mechanical dimensions or electrical parameters.

Selection Notes

Select this component when a 60 V N-channel MOSFET is required in a compact SOT-23 footprint. Consider the RDS(on) values at both 10 V and 4.5 V gate drive levels to ensure compatibility with the control logic. Evaluate the thermal resistance and power dissipation capabilities against the expected load currents and ambient temperatures.

Part Context

This part belongs to the DMN6140 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to balance low on-resistance with fast switching speeds. The DMN6140L-13 specifically denotes the version packaged in reels of 10,000 units, distinguishing it from other packaging options like the 3,000-unit reel.

Replacement Considerations

Direct substitutes include other Diodes Incorporated parts within the same DMN6140 family, such as the DMN6140L-7, which shares identical electrical specifications but differs in packaging quantity.