DMN61D8L-13

Overview

The DMN61D8L-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a continuous drain current of 470mA at 25°C ambient temperature. The device operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a maximum gate-source voltage of ±12V, a gate threshold voltage of up to 2.0V at 1mA drain current, and a total gate charge of 0.74nC at 5V. The component is housed in an SOT-23-3 package with a maximum power dissipation of 390mW.

Feature Summary

• Integrates an internal active clamp circuit to eliminate the need for external Zener diodes during inductive switching.
• Accepts logic level inputs, enabling direct driving by logic gates, inverters, and microcontrollers.
• Provides a robust interface between sensitive logic circuits and DC relay coils.
• Replaces multiple discrete components to reduce printed circuit board footprint.

Applications

• Switching automotive relays
• Controlling solenoid loads
• Driving small DC motors
• Actuating door, window, and antenna relay coils

Procurement Notes

Verify that the specific part number matches the required package type, as the DMN61D8L series includes variants with different thermal characteristics and pinouts. Confirm compliance requirements such as AEC-Q101 qualification if the application demands automotive-grade reliability. Ensure the ordering suffix corresponds to the correct tape and reel quantity specified in the manufacturer's documentation.

Selection Notes

Select this component when a single-device solution is required to switch inductive loads without external protection diodes. Consider the low gate threshold voltage for compatibility with standard logic levels. Evaluate the thermal resistance and power dissipation limits relative to the expected duty cycle and ambient operating conditions to ensure safe junction temperatures are maintained.

Part Context

This component belongs to the DMN61D8L/LVT family of 60V N-channel enhancement mode MOSFETs from Diodes Incorporated. The family includes variants such as the DMN61D8LVT, which utilizes a TSOT-26 package offering higher power dissipation capabilities compared to the SOT-23 package used by the DMN61D8L-13. These devices are designed specifically for automotive applications requiring compact footprints and integrated protection features.

Replacement Considerations

Public confirmed substitute part numbers: DMN61D8LQ-13, DMN61D8LVT-13, DMN61D8LVTQ-13.