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The DMN61D8LVT-13 is a 60V N-channel enhancement mode MOSFET in a TSOT26 package. It features a maximum continuous drain current of 630mA at +25°C and an on-resistance of 1.8Ω at VGS=5V. The device dissipates up to 820mW, operates between -55°C and +150°C, and includes an internal active clamp.
Verify the specific TSOT26 package designation when sourcing. Confirm compliance with automotive reliability standards if required for the target application environment. Ensure the ordering suffix matches the intended tape and reel quantity.
Select this component for applications requiring integrated inductive load protection without external clamping diodes. Evaluate thermal resistance requirements based on the TSOT26 package constraints. Verify that the logic level drive voltage meets the threshold requirements for reliable switching.
This part belongs to the DMN61 series of single N-channel MOSFETs designed for automotive inductive loads. It serves as a compact alternative to discrete driver circuits, consolidating switching and protection functions into a single surface-mount component.
The DMN61D8LQ-13 is the automotive-compliant variant available under separate datasheets.