DMN61D8LVTQ-13

DMN61D8LVTQ-13

$0.13
  • Description:MOSFET 2N-CH 60V 0.63A TSOT26
  • Series:-

SKU:68acf9bfeafb Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 0.63A TSOT26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:630mA
  • Rds On (Max) @ Id, Vgs:1.8Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:0.74nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:12.9pF @ 12V
  • Power - Max:820mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:TSOT-26
  • Grade:-
  • Qualification:-

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DMN61D8LVTQ-13

Overview

The DMN61D8LVTQ-13 is a dual N-channel enhancement mode MOSFET integrated into an inductive load driver. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 630mA at +25°C. The device provides a low on-resistance of 1.8Ω at VGS=5V and 2.4Ω at VGS=3V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 820mW on FR-4 PCBs. The component is housed in a TSOT26 package.

Feature Summary

  • Integrates active clamping circuitry to eliminate the need for external freewheeling diodes when switching inductive loads.
  • Accepts logic level inputs, enabling direct driving by microcontrollers, inverters, and logic gates.
  • Provides robust protection against transient voltages, including reverse battery conditions and load dump pulses.
  • AEC-Q101 qualified and manufactured in IATF 16949 certified facilities for automotive reliability.

Applications

  • Automotive door lock actuators
  • Window lift motor control
  • Antenna relay coils
  • Small DC motor switching

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive change control applications. Ensure design compliance with the manufacturer's standard terms and conditions regarding liability and product usage limitations.

Selection Notes

Select this component for applications requiring a compact solution to replace multiple discrete components such as MOSFETs, Zener diodes, and resistors. Consider the 60V rating and 630mA current limit for low-power automotive loads. Evaluate the thermal resistance characteristics based on the specific PCB copper coverage and layout constraints.

Part Context

This part belongs to the DMN61 series of integrated inductive load drivers from Diodes Incorporated. It is designed specifically for automotive environments where space savings and component count reduction are critical. The device consolidates switching and protection functions into a single TSOT26 package.

Replacement Considerations

The datasheet explicitly states that the DMN61D8LVTQ is not recommended for new designs. Consult the manufacturer directly for potential replacement options or updated product recommendations.

FAQ

Does the DMN61D8LVTQ require an external flyback diode?

No, the device includes an internal active clamp that removes the need for an external Zener or freewheeling diode.

What is the maximum gate-source voltage rating?

The maximum continuous gate-source voltage (VGSS) is rated at ±12 V.

Is this component suitable for automotive applications?

Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

DMN61D8LVTQ-13DMN61D8LVTQ-13
$0.13
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