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The DMN61D8LVTQ-13 is a dual N-channel enhancement mode MOSFET integrated into an inductive load driver. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 630mA at +25°C. The device provides a low on-resistance of 1.8Ω at VGS=5V and 2.4Ω at VGS=3V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 820mW on FR-4 PCBs. The component is housed in a TSOT26 package.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive change control applications. Ensure design compliance with the manufacturer's standard terms and conditions regarding liability and product usage limitations.
Select this component for applications requiring a compact solution to replace multiple discrete components such as MOSFETs, Zener diodes, and resistors. Consider the 60V rating and 630mA current limit for low-power automotive loads. Evaluate the thermal resistance characteristics based on the specific PCB copper coverage and layout constraints.
This part belongs to the DMN61 series of integrated inductive load drivers from Diodes Incorporated. It is designed specifically for automotive environments where space savings and component count reduction are critical. The device consolidates switching and protection functions into a single TSOT26 package.
The datasheet explicitly states that the DMN61D8LVTQ is not recommended for new designs. Consult the manufacturer directly for potential replacement options or updated product recommendations.
No, the device includes an internal active clamp that removes the need for an external Zener or freewheeling diode.
The maximum continuous gate-source voltage (VGSS) is rated at ±12 V.
Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.