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The DMN61D9UDW-13-50 is a dual N-channel enhancement mode MOSFET array manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 350mA at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 2 Ohms when tested at 50mA and 5V gate-source voltage. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 320mW. The component is housed in an SOT-363 surface-mount package.
Verify the specific suffix '-50' against the official manufacturer datasheet to confirm packaging quantity or tape-and-reel specifications. Ensure compatibility with existing design parameters before procurement. Confirm current production status and availability through authorized distributors. Check for any recent product change notifications that may affect form, fit, or function.
Select this component for applications requiring dual N-channel switching in a minimal footprint. The AEC-Q101 qualification makes it appropriate for automotive use cases where reliability is critical. Compare the 2 Ohm Rds(on) and 350mA current rating against circuit requirements to ensure adequate performance margins. Consider the SOT-363 package dimensions for PCB layout constraints.
This part belongs to the DMN series of dual N-channel MOSFET arrays from Diodes Incorporated. These devices are designed to provide high-density switching solutions in small surface-mount packages. The series typically targets cost-sensitive and space-limited applications across consumer and industrial sectors.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical parameter compatibility if considering alternative manufacturers.