DMN61D9UDW-13-50

DMN61D9UDW-13-50

  • Description:MOSFET 2N-CH 60V 0.35A SOT363
  • Series:-

SKU:4b7a2ea36b3d Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 0.35A SOT363
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
  • Rds On (Max) @ Id, Vgs:2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:28.5pF @ 30V
  • Power - Max:320mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMN61D9UDW-13-50

Overview

The DMN61D9UDW-13-50 is a dual N-channel enhancement mode MOSFET array manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 350mA at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 2 Ohms when tested at 50mA and 5V gate-source voltage. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 320mW. The component is housed in an SOT-363 surface-mount package.

Feature Summary

  • Dual N-channel configuration integrating two independent transistors into a single compact package for space-constrained designs.
  • Automotive-grade reliability certified under the AEC-Q101 standard, ensuring suitability for demanding automotive environments.
  • Low gate charge characteristics facilitate efficient switching performance and reduced drive power requirements.

Applications

  • Automotive electronic systems requiring robust switching components
  • General-purpose signal switching circuits
  • Low-power load management applications

Procurement Notes

Verify the specific suffix '-50' against the official manufacturer datasheet to confirm packaging quantity or tape-and-reel specifications. Ensure compatibility with existing design parameters before procurement. Confirm current production status and availability through authorized distributors. Check for any recent product change notifications that may affect form, fit, or function.

Selection Notes

Select this component for applications requiring dual N-channel switching in a minimal footprint. The AEC-Q101 qualification makes it appropriate for automotive use cases where reliability is critical. Compare the 2 Ohm Rds(on) and 350mA current rating against circuit requirements to ensure adequate performance margins. Consider the SOT-363 package dimensions for PCB layout constraints.

Part Context

This part belongs to the DMN series of dual N-channel MOSFET arrays from Diodes Incorporated. These devices are designed to provide high-density switching solutions in small surface-mount packages. The series typically targets cost-sensitive and space-limited applications across consumer and industrial sectors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical parameter compatibility if considering alternative manufacturers.

DMN61D9UDW-13-50DMN61D9UDW-13-50

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