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Product Detailed Parameters
- Description：2N7002 FAMILY SOT523 T&R 10K
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：28.5 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：260mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN61D9UT-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage (Vds) and a continuous drain current (Id) of 350mA at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 260mΩ, with a gate-source voltage rating of ±20V. Packaged in an SOT-523-3 surface-mount case, it supports a power dissipation of 260mW and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Single N-channel enhancement mode configuration for discrete switching applications
- Low on-resistance design optimized for efficient power handling
- Compact SOT-523-3 surface-mount package suitable for space-constrained PCB layouts
Applications
- Battery protection circuits
- Power management modules
- General-purpose low-side switching
Procurement Notes
Verify the specific suffix 'UT-13' against official Diodes Incorporated documentation to confirm the exact tape-and-reel packaging quantity and variant specifications. Ensure compatibility with existing footprint designs, as package dimensions are critical for SMD/SMT assembly processes. Cross-reference the datasheet revision date to validate thermal and electrical parameters before finalizing procurement orders.
Selection Notes
Select this component when a compact N-channel MOSFET with 60V blocking capability and moderate current handling is required. The SOT-523-3 package offers a smaller footprint compared to standard SOT-23 options. Evaluate the Rds(on) and thermal dissipation limits relative to the expected load current and ambient operating conditions to ensure reliable performance within the specified temperature range.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are designed for general-purpose switching applications requiring small form factors. The series typically includes variants with different voltage ratings and package types, such as SOT-23 and SOT-523, catering to diverse consumer electronics and industrial control needs.
Replacement Considerations
Check for direct substitutes like DMN61D9U or DMN61D9UT-7, ensuring pinout and electrical parameters match. Verify that alternative packages maintain the same thermal and mechanical constraints for the target application.
