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Product Detailed Parameters
- Description：2N7002 FAMILY SOT523 T&R 3K
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：28.5 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：260mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN61D9UT-7 is a dual N-channel enhancement mode MOSFET array manufactured by Diodes Incorporated. It integrates two independent N-channel field-effect transistors within a compact SOT-363 surface-mount package. The device supports a maximum drain-source voltage of 60V and provides a continuous drain current of 350mA at 25°C. Key electrical characteristics include a maximum on-resistance of 2 ohms at 5V gate drive, a threshold voltage of 1V, and a power dissipation rating of 320mW. It operates across an extended temperature range from -55°C to +150°C junction temperature.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs in a single package for space-constrained designs
- High-voltage capability with a 60V drain-source breakdown voltage rating
- Low gate charge characteristics enabling efficient switching performance
- Extended thermal operating range suitable for demanding industrial environments
Applications
- Battery protection circuits requiring dual-switch isolation
- Load switching applications in portable consumer electronics
- General-purpose signal routing in mobile devices
- Power management modules in automotive infotainment systems
Procurement Notes
Verify the specific suffix '7' corresponds to the standard tape-and-reel packaging format required for automated assembly processes. Confirm that the component meets RoHS3 compliance standards for environmental regulations. Ensure the ordering quantity aligns with the manufacturer's standard reel size specifications to avoid handling discrepancies during production integration.
Selection Notes
Select this component when a design requires two isolated N-channel switches within a minimal footprint. The 60V rating provides sufficient headroom for 5V and 12V system architectures. Consider the 2-ohm on-resistance for low-current load applications where efficiency losses must be minimized without requiring complex heat sinking solutions due to the small package size.
Part Context
This part belongs to the DMN61 series of dual N-channel MOSFET arrays produced by Diodes Incorporated. The series focuses on providing high-density switching solutions for modern electronic devices. The SOT-363 package is widely utilized in smartphones and tablets to maximize board real estate while maintaining reliable electrical performance under standard operating conditions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers or different package variants within the same product family.
