DMN61D9UWQ-13

$0.27

Description：MOSFET N-CH 60V 400MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:904dfe485129 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 400MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：28.5 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：440mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN61D9UWQ-13

Overview

The DMN61D9UWQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 2Ω at VGS = 5.0V and 2.5Ω at VGS = 2.5V, with continuous drain currents of 340mA at +25°C and 300mA at +70°C. Total power dissipation reaches 440mW under specific PCB mounting conditions. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protection up to 2kV
AEC-Q101 qualified for automotive applications

Applications

Motor controls
Power management functions
Backlighting

Procurement Notes

Verify the component against the official datasheet DS39554 Rev. 2-3. Confirm that the SOT-323 package matches your board layout requirements. Ensure the design accounts for the specified thermal resistance values under your actual PCB copper coverage conditions. Check for AEC-Q101 qualification if used in automotive contexts.

Selection Notes

Select this part for compact designs requiring 60V blocking capability in small surface-mount packages. Consider the RDS(ON) limits at lower gate voltages (e.g., 2.5V or 1.8V) when designing drive circuits. Evaluate the thermal performance based on the specific copper area available on the PCB for heat dissipation.

Part Context

This component belongs to the DMN61 series of N-channel MOSFETs from Diodes Incorporated. It is designed as a next-generation solution to minimize on-state resistance while maintaining superior switching performance. The device is suitable for applications demanding high efficiency in tight spaces.