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Product Detailed Parameters
- Description：MOSFET N-CH 60V 100MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.45 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：32 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：470mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
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Overview
The DMN62D0LFB-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 320mA at +25°C. The device offers a low on-state resistance (RDS(ON)) of 2Ω at VGS = 4V and 100mA, or 2.5Ω at VGS = 2.5V and 50mA. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 0.5W. The component is housed in an X1-DFN1006-3 surface-mount package.
Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected structure
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Procurement Notes
Verify the specific ordering suffix when purchasing. The DMN62D0LFB-7 designation indicates a tape and reel packaging quantity of 3,000 units per reel. Confirm that the required packaging matches the application's assembly equipment capabilities before placing orders.
Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with a 60V rating and moderate current handling capability. Ensure the gate drive voltage meets the minimum requirements for the desired RDS(ON), as performance varies significantly between 1.5V, 2.5V, and 4V gate thresholds.
Part Context
This part belongs to the DMN62 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for general-purpose switching and amplification in portable and battery-powered electronics.
Replacement Considerations
The DMN62D0LFB-7B is a compatible alternative from the same manufacturer, offering identical electrical characteristics but packaged in a 10,000-unit tape and reel.
FAQ
What is the maximum pulsed drain current for the DMN62D0LFB-7?
The maximum pulsed drain current (IDM) is rated at 1A.
Is the DMN62D0LFB-7 suitable for automotive applications?
For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, customers must contact Diodes Incorporated directly.
