DMN62D0UDWQ-7

$0.41

Description：MOSFET 2N-CH 60V 0.35A SOT363
Series：-

SKU:4eb7f1aa1294 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.35A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：32pF @ 30V
Power - Max：320mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：Automotive
Qualification：AEC-Q101

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DMN62D0UDWQ-7

Overview

The DMN62D0UDWQ-7 is a dual N-channel enhancement mode MOSFET in an SOT363 package. It features a drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 350mA at +25°C. The maximum on-resistance (RDS(ON)) is 2Ω at VGS = 4.5V and 2.5Ω at VGS = 2.5V. Total gate charge (Qg) is typically 0.5nC, with turn-on delay time of 2.4ns and fall time of 12.5ns. Thermal resistance (RθJA) is 400°C/W steady state.

Feature Summary

Dual N-channel configuration integrated into an ultra-small surface-mount package
Qualified to AEC-Q101 standards for automotive applications
Low input capacitance and fast switching speed characteristics
ESD protected gates with low input/output leakage

Applications

Motor control systems
Power-management functions
Automotive electronic circuits

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and carrier type. Ensure compliance with RoHS 3 and halogen-free requirements as defined by the manufacturer. Confirm that the component meets IATF 16949 facility manufacturing standards required for automotive change control specifications.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching applications. The device offers optimized performance for power management due to its low on-resistance and fast switching capabilities. Consider the SOT363 package constraints for thermal dissipation and PCB layout requirements during the design phase.

Part Context

This part belongs to the DMN series of dual MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The component is suitable for portable applications and high-efficiency power management tasks requiring small form factors.