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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.49A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：490mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：32pF @ 30V
- Power - Max：470mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN62D0UV-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a typical static drain-source on-resistance (RDS(ON)) of 2Ω at VGS = 4.5V with a continuous drain current (ID) of 490mA at +25°C. It operates within a temperature range of -55°C to +150°C and is housed in an SOT563 package.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- Low on-state resistance to minimize power loss
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- High efficiency power management applications
- Battery protection circuits
- Load switches in portable devices
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format as documented in the manufacturer's ordering information. Confirm that the component meets AEC-Q101 standards if automotive reliability requirements are applicable to the design. Ensure compliance with RoHS and halogen-free specifications during procurement.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching applications. The SOT563 package provides a small footprint suitable for dense PCB layouts. Consider the 60V breakdown voltage and 490mA current capability against the specific load requirements of the target application.
Part Context
This part belongs to the DMN62D0U series of dual N-channel MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other variants in the family but differs in packaging and quantity. The 'UV' designation indicates the specific SOT563 case style used for this component.
Replacement Considerations
DMN62D0UV-7 is a verified substitute offering identical electrical specifications and SOT563 packaging, differing only in the reel quantity of 3,000 units instead of 10,000.
