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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.49A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：490mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：32pF @ 30V
- Power - Max：470mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN62D0UV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 490mA at 25°C, with an on-resistance of 2Ω at VGS=4.5V. Packaged in an SOT563 case, it offers a total power dissipation of 470mW and includes integrated gate protection diodes.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- Low on-state resistance to minimize conduction losses
- Fast switching speed combined with low input capacitance
- Integrated ESD protected gates for enhanced reliability
Applications
- High efficiency power management applications
- Load switch implementations
- Portable electronic devices requiring compact packaging
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Ensure that the selected variant matches the required tape and reel dimensions for automated assembly processes. Confirm compliance with RoHS and AEC-Q101 standards if automotive or strict environmental regulations apply to the target application.
Selection Notes
Select this component when a dual N-channel topology is required in a minimal footprint. Evaluate the thermal resistance characteristics against the expected ambient conditions and duty cycles. Consider the gate threshold voltage requirements relative to the driving logic levels to ensure reliable turn-on performance under varying load conditions.
Part Context
This part belongs to the DMN62 series of dual MOSFETs from Diodes Incorporated. It utilizes the SOT563 package, which is designed for surface-mount technology. The series focuses on providing high efficiency through minimized on-resistance while maintaining robust switching capabilities suitable for modern portable electronics.
Replacement Considerations
Consult official substitution lists for verified equivalents. Verify pinout compatibility and electrical parameter alignment before replacing components in existing designs.
