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Product Detailed Parameters
- Description：MOSFET N-CH 60V 340MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：340mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：32 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：320mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN62D0UWQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current of 340mA at 25°C, with a maximum on-resistance of 2Ω at VGS=4.5V. Packaged in an SOT323 surface-mount housing, it includes an integrated ESD protected gate structure.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Integrated electrostatic discharge protection on the gate terminal
- Compliant with RoHS directives and halogen-free manufacturing requirements
Applications
- Motor control circuits
- Power management functions
- Backlighting systems
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required tape and reel quantity. Ensure compliance with applicable environmental regulations and quality standards before integration into final assemblies.
Selection Notes
Evaluate thermal resistance characteristics against expected operating conditions. Verify gate threshold voltage compatibility with driving logic levels. Assess package suitability for automated assembly processes and available board space constraints.
Part Context
This component belongs to the DMN62 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series targets automotive applications requiring high reliability and stringent change control protocols.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pinout configurations and electrical parameters carefully before implementation.
