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Product Detailed Parameters
- Description：MOSFET N-CH 60V 400MA 3DFN T&R 3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.55 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN1212-3 (Type C)
- Package / Case：3-PowerUDFN
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Overview
The DMN62D1LFDQ-7 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 400mA at +25°C. The device offers low on-resistance, specified as 2Ω at VGS=4V and 2.5Ω at VGS=2.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in a U-DFN1212-3 package.
Feature Summary
- AEC-Q101 qualified with PPAP capability for automotive use
- Low input capacitance and fast switching speed
- ESD protected structure
- Totally lead-free and fully RoHS compliant
Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix (-7 or -13) against the required packing quantity before procurement. Confirm that the component meets AEC-Q101 qualification standards if the application requires automotive-grade reliability. Ensure the design accounts for the thermal resistance characteristics provided in the datasheet to maintain safe operating temperatures.
Selection Notes
Select this component when a small footprint U-DFN1212-3 package is required for 60V N-channel switching. Consider its low gate charge and threshold voltage for efficient drive requirements. Evaluate the thermal performance under expected load conditions to ensure the junction temperature remains within the specified operational limits during continuous operation.
Part Context
This part belongs to the DMN62 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is engineered to meet stringent automotive industry standards, providing reliable performance in compact surface-mount configurations suitable for modern electronic designs requiring high efficiency and durability.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent parts. Cross-referencing should strictly match electrical parameters, package dimensions, and automotive qualification status to ensure functional compatibility without compromising system integrity.
