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Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：538mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 40mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：43 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：U-DFN1006-3/SWP (Type UX)
- Package / Case：3-UFDFN
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Overview
The DMN62D1SFBWQ-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 538 mA at ambient temperature. The device operates with a maximum power dissipation of 500 mW. It utilizes the U-DFN1006-3 surface-mount package, also designated as X2-DFN1006-3 or UX type. The component is qualified under AEC-Q101 standards for automotive applications.
Feature Summary
- AEC-Q101 qualified for automotive reliability requirements
- Low gate threshold voltage design for efficient drive capability
- Compact U-DFN1006-3 surface-mount footprint
Applications
- Automotive electronic systems
- Industrial control circuits
- Computing hardware components
- Consumer electronics devices
- Communication equipment modules
Procurement Notes
Verify the specific suffix WQ indicates AEC-Q101 qualification status against the official manufacturer datasheet. Confirm the package designation matches U-DFN1006-3 specifications. Ensure the ordering information aligns with the exact part number DMN62D1SFBWQ-7B to avoid functional mismatches with non-qualified variants.
Selection Notes
Select this component when automotive-grade reliability is required alongside a compact surface-mount form factor. The 60 V rating suits low-voltage switching applications. Verify that the 538 mA current capacity meets the load requirements. Consider the U-DFN1006-3 dimensions for PCB layout constraints compared to larger packages.
Part Context
This part belongs to the DMN62 series of N-channel MOSFETs from Diodes Incorporated. The series includes various packages and qualification levels. The WQ suffix specifically denotes automotive qualification. Other variants in the family may differ in package type, such as SOT-23, or lack automotive certification.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's cross-reference tools for verified alternatives.
