DMN62D2U-7

$0.05

Description：2N7002 FAMILY SOT23 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:77ae4836ddaa Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：2N7002 FAMILY SOT23 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：390mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

DMN62D2U-7

Overview

The DMN62D2U-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (BVDSS) of 60V and a maximum continuous drain current (ID) of 390mA at +25°C. The device offers low on-state resistance, specified as 2.0Ω max at VGS = 5.0V, 2.5Ω max at VGS = 2.5V, and 4.0Ω max at VGS = 1.8V. It operates within a temperature range of -55°C to +150°C and utilizes an SOT23 package.

Feature Summary

Low input capacitance for fast switching performance
ESD protected structure with low leakage currents
Totally lead-free and fully RoHS compliant construction

Applications

Motor controls
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity. The '-7' suffix indicates a tape and reel carrier containing 3,000 units. Confirm that the component meets all applicable environmental directives, including RoHS and halogen-free requirements, before finalizing procurement specifications.

Selection Notes

Select this component when a compact single N-channel switch is required for low-voltage applications. Ensure the gate drive voltage aligns with the desired on-resistance characteristics, as RDS(ON) varies significantly between 5.0V, 2.5V, and 1.8V gate thresholds. Verify thermal dissipation capabilities against the junction-to-ambient resistance values provided in the datasheet.

Part Context

This part belongs to the DMN62D2U series of 60V N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. An automotive-compliant variant, designated as DMN62D2UQ, is available under a separate datasheet for applications requiring higher reliability standards.