DMN62D2UDMQ-7

$0.09

Description：MOSFET 2N-CH 60V 0.44A SOT26
Series：-

SKU:385909a93154 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.44A SOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：440mA (Ta)
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
Power - Max：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6
Supplier Device Package：SOT-26
Grade：Automotive
Qualification：AEC-Q101

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DMN62D2UDMQ-7

Overview

The DMN62D2UDMQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a breakdown voltage (BVDSS) range of 41V to 60V and is housed in an SOT-26 surface-mount package. The device supports continuous drain currents up to 440mA and offers a power dissipation capacity of 500mW at ambient temperature. Designed for silicon technology, it operates within a junction temperature range of -55°C to +150°C. The component is supplied in tape and reel formats with a standard factory quantity of 3000 units per reel.

Feature Summary

Dual N-channel configuration integrated into a compact SOT-26 package
Enhancement mode operation suitable for low-voltage switching applications
High breakdown voltage capability supporting 41V to 60V ranges

Applications

Low-voltage load switching circuits
Power management modules requiring dual channel control
Battery protection systems

Procurement Notes

Verify the specific BVDSS variant (41V or 60V) required for your design, as the part number covers a range. Confirm that the SOT-26 footprint matches your PCB layout constraints. Ensure thermal management strategies account for the 500mW power dissipation limit under operating conditions. Check for any specific AEC-Q101 qualification requirements if automotive standards are necessary.

Selection Notes

Select this component when a dual N-channel MOSFET solution is needed in a small form factor. The SOT-26 package provides space efficiency compared to discrete single-channel options. Consider the 41V-60V voltage range to ensure compatibility with system supply rails. Evaluate the 440mA current rating against peak load requirements to prevent overstress during transient conditions.

Part Context

This part belongs to the DMN62D series from Diodes Incorporated, which focuses on dual N-channel MOSFETs. The series utilizes silicon technology to provide reliable switching performance. The DMN62D2UDMQ-7 specifically denotes the SOT-26 packaging variant, distinguishing it from other packages like SOT-323 or SOT-563 found in the same product family.