ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.34A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：340mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
- Power - Max：300mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
Download product information
Overview
The DMN62D2UDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a -55°C to +150°C junction temperature range. The device provides a maximum continuous drain current of 340mA at 25°C, with an on-resistance of 2.0Ω at VGS=5.0V. Packaged in an ultra-small SOT363 surface-mount format, it includes integrated gate protection diodes for each channel.
Feature Summary
- Dual N-channel configuration with integrated gate protection diodes
- Low on-state resistance optimized for high-efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
Applications
- Motor controls
- Power-management functions
- High-efficiency power-management applications
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging carrier. Confirm that the component meets JEDEC standards for high reliability if required by the design specifications. Ensure the application environment remains within the specified thermal and voltage limits defined in the datasheet.
Selection Notes
Select this component when a compact dual-switch solution is required for low-voltage DC applications. The SOT363 package minimizes board space while maintaining adequate thermal performance for currents up to 340mA. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Part Context
This part belongs to the DMN62D2U series of dual N-channel MOSFETs from Diodes Incorporated. It shares the same die and electrical characteristics as the DMN62D2UDW-7 variant, differing only in the standard manufacturing packing quantity and carrier type used for automated assembly processes.
Replacement Considerations
The DMN62D2UDW-7 is a confirmed substitute offering identical electrical performance and pinout compatibility. Both variants utilize the SOT363 package and share the same marking codes, allowing for direct interchangeability in existing designs without circuit modification.
