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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.34A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：340mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
- Power - Max：300mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN62D2UDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and an ultra-small SOT363 surface-mount package. The device offers low on-state resistance, with maximum values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current reaches 340mA at +25°C. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in an ultra-small SOT363 package
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected and fully RoHS compliant
Applications
- Motor controls
- Power-management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. The -7 suffix indicates a tape and reel quantity of 3,000 units. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications, before finalizing procurement orders.
Selection Notes
Select this component when space constraints require an SOT363 footprint while maintaining dual N-channel functionality. Ensure the application gate drive voltage aligns with the specified RDS(ON) characteristics at 5.0V, 2.5V, or 1.8V. Verify thermal dissipation requirements against the junction-to-ambient resistance limits provided in the datasheet.
Part Context
This part belongs to the DMN62D2U series of dual N-channel MOSFETs designed for compact power applications. It shares the same electrical profile as the DMN62D2UDW-13 variant but differs in packaging quantity. The device is intended for general-purpose switching and load control tasks within consumer electronics and industrial equipment.
Replacement Considerations
The DMN62D2UDW-13 serves as a direct functional substitute with identical electrical parameters, differing only in the standard tape and reel quantity of 10,000 units compared to the 3,000-unit quantity of the -7 suffix.
