DMN62D2UDWQ-13

Overview

The DMN62D2UDWQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source voltage rating and operates within a temperature range of -55°C to +150°C. The device offers low on-resistance, with maximum values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current reaches 340mA at 25°C. Packaged in an ultra-small SOT363 surface-mount format, it includes integrated gate protection diodes.

Feature Summary

• Dual N-channel configuration with integrated gate protection diodes
• Qualified to AEC-Q101 standards with PPAP capability
• Low input capacitance and fast switching speed
• Totally lead-free and fully RoHS compliant

Applications

• Motor controls
• Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 10,000 units. Confirm that the component meets the necessary IATF 16949 manufacturing facility requirements for your automotive supply chain. Ensure compatibility with standard SMD/SMT assembly processes given the SOT363 package dimensions.

Selection Notes

Select this component when space constraints require a dual N-channel solution in an SOT363 package. It is suitable for circuits requiring low gate threshold voltage operation and high reliability under automotive thermal conditions. Consider its power dissipation limits and thermal resistance characteristics during PCB layout design.

Part Context

This part belongs to Diodes Incorporated's DMN series of dual N-channel MOSFETs. It shares the same electrical specifications as the DMN62D2UDWQ but differs in packaging quantity. The 'DWQ' designation indicates the SOT363 package and automotive qualification status.

Replacement Considerations

The DMN62D2UDWQ-7 serves as a direct functional substitute, offering identical electrical performance and package type but packaged in quantities of 3,000 units per tape and reel instead of 10,000.