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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.45A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：450mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN62D2UV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides low on-state resistance, with maximum values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current reaches 450mA at 25°C. Packaged in an SOT563 surface-mount housing, it includes integrated gate protection diodes.
Feature Summary
- Dual N-channel configuration with integrated gate protection diodes
- Optimized for high-efficiency power management applications
- Low input capacitance and fast switching speed
- Totally lead-free and fully RoHS compliant
Applications
- Motor controls
- Power-management functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm that the component meets all applicable environmental directives, including RoHS 3 compliance and halogen-free requirements. Ensure the selected variant matches the required tape and reel specifications for automated assembly processes.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching. Evaluate thermal performance based on the specified junction-to-ambient resistance under your specific board layout conditions. Consider the gate threshold voltage characteristics to ensure compatibility with your logic drive levels.
Part Context
This part belongs to the DMN62D series of dual N-channel MOSFETs from Diodes Incorporated. These devices are designed to minimize on-state resistance while maintaining superior switching performance. The series targets space-constrained designs requiring efficient power handling in small surface-mount packages.
Replacement Considerations
An automotive-compliant version is available as DMN62D2UVQ. Verify pinout compatibility and electrical parameter overlaps before substituting with other dual N-channel MOSFETs in the SOT563 package.
