DMN62D2UVTQ-13

Overview

The DMN62D2UVTQ-13 is a dual N-channel enhancement mode MOSFET in a TSOT26 package, qualified to AEC-Q101 for automotive use. It features a 60V drain-source voltage rating and low on-resistance of 2.0Ω at VGS=5V. The device supports continuous drain currents up to 455mA and operates within a -55°C to +150°C junction temperature range.

Feature Summary

• AEC-Q101 qualified with PPAP capability for automotive applications
• Dual N-channel configuration in a compact TSOT26 package
• Low gate threshold voltage enabling efficient drive from low logic levels
• Totally lead-free and fully RoHS compliant construction

Applications

• General-purpose interfacing switches
• Power-management functions
• Automotive electronic control units

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets the necessary IATF 16949 manufacturing standards for your supply chain requirements. Ensure compatibility with your automated assembly equipment regarding the TSOT26 package dimensions.

Selection Notes

Select this component when dual N-channel switching is required in a minimal footprint. The low input capacitance and fast switching speed make it suitable for high-frequency applications. Verify that the 60V breakdown voltage aligns with your system's maximum operating conditions.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes silicon technology optimized for low on-resistance and robust thermal performance. The TSOT26 package provides a space-efficient solution for modern surface-mount assembly processes.

Replacement Considerations

DMN62D2UDW-13

FAQ

Is the DMN62D2UVTQ-13 suitable for harsh automotive environments?

Yes, it is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities.

What is the maximum junction temperature for this device?

The maximum operating and storage junction temperature is +150°C.