DMN62D4LDW-13

$0.04

Description：MOSFET 2N-CH 60V 0.261A SOT363
Series：-

SKU:40d0ab42787b Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.261A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：261mA (Ta)
Rds On (Max) @ Id, Vgs：3Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
Power - Max：330mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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DMN62D4LDW-13

Overview

The DMN62D4LDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 261mA at +25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 3.0Ω at VGS = 10V and 4.0Ω at VGS = 4.5V. Total power dissipation is rated at 0.33W in steady state. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual N-channel configuration for compact circuit design
Low on-state resistance for high efficiency
Fast switching speed with low input capacitance
ESD protected structure

Applications

Motor control circuits
Power management functions
High efficiency power conversion systems

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging format. Confirm that the SOT363 package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS 3 and halogen-free specifications if required by your manufacturing standards. Validate component authenticity through authorized distribution channels.

Selection Notes

Select this component when a dual N-channel topology is required within a minimal SOT363 footprint. Consider the 60V breakdown voltage and 261mA continuous current limits against your peak load requirements. Evaluate the RDS(ON) values at your specific gate drive voltages (4.5V or 10V) to ensure acceptable conduction losses. Verify thermal performance under your expected duty cycle conditions.

Part Context

This part belongs to Diodes Incorporated's DMN series of dual N-channel MOSFETs. It utilizes the SOT363 surface-mount package, which houses two independent N-channel enhancement mode transistors in a single compact form factor. The device is designed to minimize on-state resistance while maintaining superior switching performance for efficient power management applications.