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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.261A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：261mA (Ta)
- Rds On (Max) @ Id, Vgs：3Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.04nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
- Power - Max：330mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN62D4LDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 3.0Ω at VGS = 10V and 4.0Ω at VGS = 4.5V. Continuous drain current (ID) reaches 261mA at +25°C. Packaged in an SOT363 case, it includes internal gate protection diodes.
Feature Summary
- Dual N-channel configuration with integrated gate protection diodes for enhanced circuit reliability
- Low on-state resistance optimized for high-efficiency power management applications
- Fast switching speed supported by low input capacitance and total gate charge values
- Totally lead-free and fully RoHS compliant construction
Applications
- Motor control systems
- Power management functions
- General-purpose switching circuits
Procurement Notes
Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a tape and reel quantity of 3,000 units, while the -13 suffix denotes 10,000 units per reel. Confirm that the required package type matches the SOT363 specification. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling procedures.
Selection Notes
Select this component when a compact dual N-channel solution is required within a small footprint. The SOT363 package provides space efficiency compared to single discrete packages. Evaluate the RDS(ON) specifications against the intended load current and gate drive voltage levels. Consider the thermal resistance characteristics if operating near maximum temperature limits.
Part Context
This part belongs to the DMN62D series of dual N-channel MOSFETs from Diodes Incorporated. These devices are designed to minimize on-state resistance while maintaining superior switching performance. The series targets applications requiring efficient power management in limited board space environments.
Replacement Considerations
The DMN62D4LDW-13 serves as a direct replacement offering identical electrical characteristics but packaged in quantities of 10,000 units per tape and reel instead of 3,000 units.
