DMN63D1L-13

$0.20

Description：MOSFET N-CH 60V 380MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:68de8e4691fb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 380MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：0.3 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：30 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN63D1L-13

Overview

The DMN63D1L-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-23 package. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 380 mA at +25°C ambient temperature. The device exhibits a maximum on-state resistance (Rds(on)) of 2 Ω at Vgs = 10V and 3 Ω at Vgs = 5V. Total power dissipation is rated at 370 mW, with an operating junction temperature range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Includes integrated gate protection diode and ESD protection up to 2kV.
Qualified to AEC-Q101 standards for high reliability automotive applications.
Totally lead-free, fully RoHS compliant, and halogen/antimony free.

Applications

Motor Control
Power Management Functions
Backlighting

Procurement Notes

Verify the component datasheet revision number matches the required specifications before procurement. Confirm that the ordering suffix '-13' corresponds to the specific tape and reel packaging quantity intended for the manufacturing process. Ensure compliance with environmental directives such as RoHS 2 and confirm the absence of intentionally added lead or restricted substances.

Selection Notes

Select this component when a low-cost, single N-channel MOSFET is required for general-purpose switching within a 60V limit. Consider the thermal resistance characteristics and the specific Rds(on) values at different gate voltages to ensure adequate drive capability. Evaluate the package size constraints against the available PCB real estate and verify that the current requirements do not exceed the steady-state ratings under expected operating temperatures.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on providing low on-resistance and fast switching capabilities suitable for portable electronics and power management circuits. The DMN63D1L variant specifically targets applications requiring moderate voltage handling and current capacity in a compact SOT-23 footprint.