DMN63D1LDW-7

Overview

The DMN63D1LDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 250mA at 25°C. The device offers low on-resistance, specified as 2Ω at VGS=10V and 3Ω at VGS=5V. It operates within a temperature range of -55°C to +150°C and is housed in an SOT363 surface-mount package.

Feature Summary

• Dual N-channel configuration with integrated gate protection diodes
• Low on-state resistance for high efficiency power management
• Fast switching speed with low input capacitance
• Qualified to AEC-Q101 standards for automotive reliability

Applications

• Motor control circuits
• Power management functions
• Load switching applications

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a 3000-unit tape and reel, while the -13 suffix denotes a 10000-unit tape and reel. Ensure the component meets RoHS compliance requirements and matches the required SOT363 footprint for your PCB layout.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching. The 60V rating provides adequate headroom for 12V systems. Consider the thermal resistance of 414°C/W for single-sided FR-4 layouts without significant copper coverage when evaluating power dissipation limits.

Part Context

This part belongs to the DMN63 series of dual N-channel MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance in ultra-small surface mount packages suitable for portable and space-constrained electronic designs.

Replacement Considerations

The DMN63D1LDW-13 serves as a direct substitute with identical electrical characteristics but differs only in the bulk packaging quantity (10000 units versus 3000 units). Verify pinout compatibility before substitution.