ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.55A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：550mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：0.392nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：30pF @ 25V
- Power - Max：940mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
Download product information
Overview
The DMN63D1LV-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT563 surface-mount package and operates with a drain-source voltage of 60V. The device supports a continuous drain current of 550mA at 25°C, reducing to 450mA at 70°C. Maximum on-resistance is specified as 2Ω at VGS=10V and 3Ω at VGS=5V. Total power dissipation reaches 940mW on high-coverage PCBs. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- Optimized low on-resistance for improved efficiency
- Fast switching speed with low input capacitance
- ESD protection rated up to 2kV
Applications
- Motor control systems
- Power management functions
- Backlighting circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging format. Confirm that the component meets AEC-Q101 standards if automotive reliability requirements are necessary. Ensure compliance with RoHS 2 and halogen-free specifications during procurement validation.
Selection Notes
Select this component for applications requiring dual N-channel isolation in a compact footprint. Evaluate thermal resistance values based on the specific PCB copper coverage and pad layout used in the design. Consider the gate threshold voltage characteristics when designing logic-level drive circuits.
Part Context
This part belongs to the DMN63 series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes the SOT563 case outline, providing six terminals for two independent channels. The device is designed to minimize conduction loss while maintaining superior switching performance for portable and power management applications.
Replacement Considerations
Public confirmed substitute: DMN63D1LDW-13.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 550mA at an ambient temperature of 25°C.
Does the device include internal protection features?
Yes, the DMN63D1LV includes integrated gate protection diodes and ESD protection rated up to 2kV.
What is the typical total gate charge value?
The typical total gate charge is 392pC at VGS=4.5V and VDS=10V.
