ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.477A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：477mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.04nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
- Power - Max：450mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The DMN63D1LVQ-13 is a dual N-channel enhancement mode MOSFET in an SOT563 package. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 477 mA at +25°C. The on-resistance (Rds(on)) is 2 Ω maximum at Vgs = 10V and 3 Ω maximum at Vgs = 5V. Total power dissipation is 450 mW on FR-4 with minimum pads, or 940 mW with a 1-inch square copper plate. Gate threshold voltage (Vgs(th)) is 2.5 V maximum at Id = 1mA.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- Qualified to AEC-Q101 standards for automotive reliability
- Low input capacitance and fast switching speed
- ESD protected gate structure
Applications
- Motor controls
- Power-management functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel quantity as defined in the manufacturer's documentation. Confirm that the component meets IATF 16949 manufacturing requirements if strict automotive change control protocols are necessary for the intended deployment.
Selection Notes
Select this component when a compact dual N-channel solution is required for automotive-grade applications. Ensure the design accommodates the specified thermal resistance values based on the PCB copper area available. Verify that the gate drive voltage aligns with the low on-resistance thresholds provided in the electrical characteristics.
Part Context
This device belongs to the DMN63 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a surface-mount SOT563 package. The product line is designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Replacement Considerations
The datasheet does not list specific substitute part numbers. Evaluate alternatives based on matching pinout, voltage ratings, and package dimensions.
FAQ
Is the DMN63D1LVQ suitable for automotive applications?
Yes, it is qualified to AEC-Q101 standards and manufactured in IATF 16949 certified facilities.
What is the maximum gate-source voltage rating?
The maximum gate-source voltage (VGSS) is ±20 V.
Does the device include internal protection features?
Yes, the gates are ESD protected and feature integrated gate protection diodes.
