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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.477A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：477mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：1.04nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
- Power - Max：450mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN63D1LVQ-7 is a dual N-channel enhancement mode MOSFET in an SOT563 package. It features a drain-source voltage (Vdss) of 60 V and gate-source voltage (Vgs) of ±20 V. Continuous drain current (Id) reaches 477 mA at +25°C. Maximum on-resistance (Rds(on)) is 2 Ω at Vgs=10V/Id=500mA, and 3 Ω at Vgs=5V/Id=50mA. Gate threshold voltage (Vgs(th)) max is 2.5 V. Total power dissipation (Pd) is 450 mW. Operating temperature range spans -55°C to +150°C.
Feature Summary
- Dual N-channel configuration with integrated gate protection diodes for each channel.
- Qualified to AEC-Q101 standards with PPAP capability for automotive applications.
- Low input capacitance and fast switching speed characteristics.
- Totally lead-free, fully RoHS compliant, and halogen/antimony free.
Applications
- Motor controls
- Power-management functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and carrier type. The '-7' suffix indicates a 3,000-unit reel, while other suffixes may denote different quantities or tape formats. Confirm that the component meets all required environmental and quality certifications for the intended deployment environment before finalizing procurement.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. The SOT563 package provides a small footprint suitable for space-constrained designs. Ensure the application's continuous current requirements do not exceed the rated limits under expected thermal conditions. Verify that the 60V breakdown voltage aligns with the system's maximum operating voltages.
Part Context
This device belongs to the DMN63 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It is designed specifically to meet stringent automotive industry requirements. The part utilizes silicon technology and is housed in a molded plastic SOT563 package with matte tin annealed terminals over a copper leadframe.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-referencing pinouts, electrical ratings, and package dimensions is essential when considering equivalent components from other manufacturers.
FAQ
Does the DMN63D1LVQ include internal gate protection?
Yes, the datasheet specifies that both channels feature integrated gate protection diodes.
What is the maximum continuous drain current rating?
The maximum continuous drain current is 477 mA at an ambient temperature of +25°C.
Is this component suitable for automotive use?
Yes, it is qualified to AEC-Q101, supports PPAP, and is manufactured in IATF 16949 certified facilities.
