DMN63D1LW-13

$0.03

Description：MOSFET N-CH 60V 380MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3b35ff0e3779 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 380MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：0.3 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：30 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：310mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN63D1LW-13

Overview

The DMN63D1LW-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-323 package. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 380 mA at +25°C ambient temperature. The maximum static drain-source on-resistance (Rds(on)) is specified as 2 Ω at Vgs = 10 V and 3 Ω at Vgs = 5 V. Total power dissipation is rated at 310 mW, with an operating junction temperature range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Features low input capacitance and fast switching speed characteristics.
Includes ESD protected gate structure.
Qualified to AEC-Q101 standards for high reliability.

Applications

Motor Control
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and is halogen and antimony free. Ensure the application environment remains within the specified thermal limits and voltage ratings defined in the datasheet.

Selection Notes

Select this component when a single N-channel MOSFET with a 60 V breakdown voltage is required in a compact SOT-323 footprint. Consider the Rds(on) specifications at both 5 V and 10 V gate drive voltages to ensure compatibility with the control logic levels available in the target circuit design.

Part Context

This device belongs to the DMN63 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The product utilizes silicon technology and is housed in a molded plastic SOT-323 case with matte tin annealed terminals over an alloy 42 leadframe. It is designed for general-purpose switching applications requiring small form factors.

Replacement Considerations

The datasheet does not list confirmed substitute part numbers. Verify pinout compatibility and electrical parameters if considering alternative manufacturers or different package types such as SOT-23.