DMN63D8LDWQ-7

Overview

The DMN63D8LDWQ-7 is a dual N-channel enhancement mode MOSFET in an SOT363 package. It features a drain-source voltage of 30V and a continuous drain current of 200mA at 25°C, rising to 260mA on FR-4 substrates. The device offers low on-resistance, reaching 2.8Ω at VGS=10V and 4.2Ω at VGS=4.5V. Total power dissipation is rated at 300mW to 400mW depending on board conditions. Operating temperature ranges from -55°C to 150°C.

Feature Summary

• Dual N-channel configuration with ESD protected gates
• Optimized for low on-state resistance and fast switching speed
• Qualified to AEC-Q101 standards for high reliability
• Totally lead-free and fully RoHS compliant

Applications

• DC-DC Converters
• Power Management Functions
• Battery Operated Systems
• Solid-State Relays
• Drivers for relays, solenoids, lamps, and displays

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity; the -7 suffix indicates a 3000-unit tape and reel, while the -13 suffix denotes a 10000-unit tape and reel. Confirm that the required application meets automotive reliability standards if AEC-Q101 qualification is necessary, as electrical characteristics remain consistent across standard and automotive variants unless explicitly stated otherwise.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications. The SOT363 package provides a small surface mount footprint suitable for space-constrained designs. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Consider thermal management requirements based on the 300mW to 400mW power dissipation limits under expected operating conditions.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. It is intended for high-efficiency power management applications. The device utilizes a molded plastic case with UL flammability classification rating 94V-0 and matte tin finish terminals over an Alloy 42 leadframe.

Replacement Considerations

The DMN63D8LDWQ-13 serves as a direct substitute with identical electrical specifications but differs only in packaging quantity (10000 units per tape and reel versus 3000 units). Both parts share the same SOT363 case and mechanical data.

FAQ

What is the maximum drain-source voltage for this device?

The maximum drain-source voltage (VDSS) is 30V.

Is this component qualified for automotive applications?

Yes, the DMN63D8LDWQ is qualified to AEC-Q101 standards for high reliability and is PPAP capable.

What is the typical input capacitance?

The typical input capacitance (Ciss) is 22.0pF, measured at VDS=25V, VGS=0V, and f=1.0MHz.