DMN63D8LW-7

$0.17

Description：MOSFET N-CH 30V 380MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1140b3225c33 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 380MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：2.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：23.2 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN63D8LW-7

Overview

The DMN63D8LW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 380 mA at +25°C. The device exhibits a maximum on-resistance (RDS(ON)) of 2.8 Ω at VGS = 10 V and 3.8 Ω at VGS = 5 V. It operates within a temperature range of -55°C to +150°C, housed in an SOT-323 package.

Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protection up to 1kV
Qualified to AEC-Q101 standards for high reliability

Applications

Motor Control
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the manufacturer's documentation. Ensure the application environment remains within the rated thermal and electrical limits defined in the datasheet.

Selection Notes

Select this component for applications requiring a compact single N-channel MOSFET with low on-resistance and fast switching capabilities. Consider the 30 V breakdown voltage and 380 mA current rating when designing circuits. Evaluate the SOT-323 package constraints against available PCB space and thermal dissipation requirements.

Part Context

This part belongs to the DMN63 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMN63D8LW-7 variant specifically utilizes the SOT-323 surface-mount package for efficient board space utilization.