DMN65D7LFR4-7

$0.10

Description：MOSFET BVDSS: 41V~60V X2-DFN1010
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:0267f91226ea Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V X2-DFN1010
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 40mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.04 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：600mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1010-4 (Type B)
Package / Case：4-XDFN Exposed Pad

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DMN65D7LFR4-7

Overview

The DMN65D7LFR4 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a maximum continuous drain current of 0.26A at +25°C. The device offers a low on-resistance of 5.0Ω at VGS=10V and 5.3Ω at VGS=4.5V. Packaged in an X2-DFN1010-4 (Type B) surface-mount format, it supports a junction temperature range from -55°C to +150°C with a total power dissipation of 0.6W.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Includes integrated gate protection diode and ESD protection up to 2kV.
Utilizes a compact X2-DFN1010-4 package with NiPdAu annealed terminal finish over a copper leadframe.
Compliant with RoHS directives and characterized as halogen and antimony free.

Applications

Load switch circuits
High efficiency power management systems

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 5000-unit tape and reel packing configuration. Confirm that the X2-DFN1010-4 (Type B) package dimensions align with the target PCB footprint requirements. Ensure the design accounts for the thermal resistance characteristics provided in the datasheet for the intended operating environment.

Selection Notes

Select this component for applications requiring a small form factor N-channel MOSFET with a 60V breakdown voltage. The low input capacitance and fast switching speed make it suitable for efficient power control. Verify that the 0.26A continuous current rating meets the load requirements under the expected ambient temperature conditions.

Part Context

This part belongs to the DMN65 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on providing low on-resistance within compact packages to support modern miniaturized electronic designs. The DMN65D7LFR4 specifically utilizes the X2-DFN1010-4 package type.

Replacement Considerations

Consult the official Diodes Incorporated documentation for confirmed substitute part numbers. Do not assume cross-compatibility based solely on similar electrical ratings without verifying pinout and package specifications.