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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.18A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：180mA
- Rds On (Max) @ Id, Vgs：6Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：22pF @ 25V
- Power - Max：300mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN65D8LDWQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT363 surface-mount package and operates with a drain-source voltage of 60V. The device provides a continuous drain current of 200mA at TA = +25°C, with an on-state resistance of 8Ω at VGS = 5V and 6Ω at VGS = 10V. It includes ESD protection up to 1kV (HBM) and meets AEC-Q101 standards for high reliability.
Feature Summary
- Dual N-channel configuration in a compact SOT363 surface mount package
- Low on-resistance optimized for high efficiency power management applications
- ESD protected gate structure rated at 1kV (Human Body Model)
- Qualified to AEC-Q101 automotive standards for high reliability
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance and halogen-free requirements if environmental specifications are mandatory for the intended assembly process.
Selection Notes
Select this component when a dual N-channel MOSFET is required within a small SOT363 footprint. Ensure the application voltage does not exceed the 60V drain-source rating and that the drive voltage aligns with the specified on-resistance characteristics at either 5V or 10V gate-source levels.
Part Context
This part belongs to the DMN65D8L series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for various power management and battery-operated system applications requiring compact solutions.
Replacement Considerations
Consult official substitution lists for electrically equivalent parts. Verify pinout compatibility and thermal characteristics before replacing components in existing designs.
FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage (VGSS) is ±20V.
Is the device qualified for automotive applications?
Yes, the DMN65D8LDWQ is qualified to AEC-Q101 standards for high reliability and is PPAP capable.
What is the typical total gate charge?
The typical total gate charge (Qg) is 0.87nC at VGS = 10V and VDS = 30V.
