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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：210mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：24 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN65D8LT-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a SOT523 package. It features a drain-source voltage (BVDSS) of 60V and a maximum continuous drain current of 210mA at +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 5Ω max at VGS = 10V and 6Ω max at VGS = 5V. Key electrical parameters include a gate threshold voltage range of 1.2V to 2.0V, input capacitance of 24pF, and total gate charge of 0.4nC. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protection up to 1kV
- Totally lead-free and fully RoHS compliant
Applications
- Motor Control
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as documented in the official Diodes Incorporated datasheet. Confirm that the component meets all applicable RoHS directives and halogen-free requirements specified in the product definitions. Ensure compatibility with the SOT523 mechanical dimensions and moisture sensitivity level 1 classification for your assembly process.
Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with 60V breakdown voltage and low on-resistance. The SOT523 package suits space-constrained designs. Consider the 210mA continuous current limit and thermal resistance characteristics when designing heat dissipation strategies. Verify gate drive voltage levels align with the specified RDS(ON) test conditions for optimal performance.
Part Context
This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMN65D8LT variant specifically targets high-efficiency power management applications where small form factor and reliable switching are critical.
Replacement Considerations
Consult the official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference pinouts, electrical ratings, and package dimensions before substitution.
FAQ
What is the maximum drain-source voltage for the DMN65D8LT?
The maximum drain-source voltage (BVDSS) is 60V.
Is the DMN65D8LT suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, contact Diodes Incorporated directly as standard parts may not meet these specific criteria.
