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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V SOT563 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.87 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：370mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN65D8LV-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage (BVDSS) and a continuous drain current of 310mA. The device exhibits a maximum on-resistance of 3 Ohms at a gate-source voltage of 5V. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 540mW. The component utilizes an SOT-23-3 surface-mount package and supports AEC-Q101 automotive qualification standards.
Feature Summary
- Single N-channel enhancement mode configuration for compact circuit integration
- Automotive-grade reliability compliant with AEC-Q101 standards
- High thermal stability supporting operation up to 150°C junction temperature
Applications
- Automotive electronic control units requiring robust switching performance
- Low-power signal switching in consumer electronics
- General-purpose load switching applications
Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm exact electrical tolerances and packaging specifications. Ensure compatibility with required automotive qualification standards if deploying in vehicle systems. Cross-reference datasheet parameters for thermal management requirements during final design validation.
Selection Notes
Select this component for applications demanding a small footprint with reliable switching capabilities. The 60V rating provides adequate headroom for low-voltage systems. Evaluate the 3 Ohm on-resistance against total power loss constraints. Confirm that the SOT-23-3 package meets board space limitations and thermal dissipation needs for the target environment.
Part Context
This part belongs to the DMN65 series of N-channel MOSFETs from Diodes Incorporated. The series focuses on providing efficient switching solutions in minimal packages. The LV variant typically denotes specific threshold or resistance characteristics within the broader product line designed for general-purpose and automotive markets.
Replacement Considerations
Consult official substitution guides for verified equivalents. Direct replacements must match the SOT-23-3 package, 60V BVDSS, and N-channel configuration. Verify pinout compatibility and thermal performance metrics before implementation.
