DMN65D8LV-7

$0.05

Description：MOSFET BVDSS: 41V~60V SOT563 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b641f1ccadbe Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT563 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN65D8LV-7

Overview

The DMN65D8LV-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) ranging from 41V to 60V. The component is designed for surface-mount applications and belongs to the DMN65 series. Official documentation categorizes it as a general-purpose MOSFET suitable for low-voltage switching tasks within electronic circuits.

Feature Summary

N-channel enhancement mode operation
Surface-mount construction
Integrated single transistor configuration

Applications

Low-voltage signal switching
General-purpose power management circuits
Battery protection modules

Procurement Notes

Verify the specific breakdown voltage variant, as official sources indicate a range of 41V to 60V for this part number. Confirm package compatibility and AEC-Q101 qualification status if automotive application is required. Cross-reference with manufacturer datasheets to ensure exact electrical parameters match design specifications before finalizing procurement orders.

Selection Notes

Select this component for applications requiring compact N-channel switching solutions in the 41V to 60V range. Evaluate thermal performance requirements against the device's power dissipation capabilities. Ensure gate drive voltages align with the threshold characteristics specified in the official technical data sheet for reliable operation.

Part Context

This component is part of the DMN65 product family produced by Diodes Incorporated. The manufacturer specializes in high-quality analog and power semiconductor solutions for automotive, industrial, and consumer markets. The DMN65 series focuses on providing efficient switching capabilities in small form factors for modern electronic designs.