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Product Detailed Parameters
- Description：MOSFET N-CH 60V 300MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.87 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN65D8LW-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a typical static drain-source on-resistance (RDS(ON)) of 3Ω at VGS = 10V and 4Ω at VGS = 5V, supporting continuous drain currents of 300mA and 260mA respectively at +25°C. Packaged in a compact SOT-323 surface-mount format, it operates within a temperature range of -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure rated at 1kV (HBM)
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC converters
- Battery-operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, and displays
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard tape and reel packaging quantity of 3,000 units per carrier. Confirm that the component meets the required JEDEC standards for high reliability if intended for demanding environments. Ensure the design accommodates the specified thermal resistance values under actual operating conditions.
Selection Notes
Select this component when a small SOT-323 footprint is required alongside moderate current handling capabilities up to 300mA. Consider the 60V breakdown voltage for low-voltage applications. Evaluate the RDS(ON) performance at the specific gate drive voltage used in the circuit, as resistance varies significantly between 5V and 10V logic levels.
Part Context
This part belongs to the DMN65 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power-management applications requiring compact surface-mount solutions.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters against alternative single N-channel MOSFETs in the SOT-323 package before substitution.
