DMN66D0LDW-7

$0.76

Description：MOSFET 2N-CH 60V 0.115A SOT363
Series：-

SKU:ba36c89eb113 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.115A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
Rds On (Max) @ Id, Vgs：6Ohm @ 115mA, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：23pF @ 25V
Power - Max：250mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：Automotive
Qualification：AEC-Q101

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DMN66D0LDW-7

Overview

The DMN66D0LDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 115mA at +25°C. The device offers a typical on-resistance (RDS(on)) of 3.5Ω at VGS = 5V and 3.0Ω at VGS = 10V, with a maximum rating of 6Ω. It operates within a temperature range of -55°C to +150°C and has a total power dissipation of 250mW. Packaged in an SOT363 case, it includes ESD protection up to 1kV (HBM).

Feature Summary

Dual N-channel configuration for compact circuit integration.
Low on-resistance optimized for high-efficiency power management.
ESD protected gate structure rated at 1kV (HBM).
Fast switching speed with low input capacitance.

Applications

Load switches
High-efficiency power management applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the datasheet notes. Ensure the application environment does not exceed the maximum junction temperature or power dissipation limits defined in the thermal characteristics section.

Selection Notes

Select this component when a dual N-channel solution is required in a small surface mount package. Consider the 60V breakdown voltage and 115mA current capability against load requirements. Evaluate the RDS(on) performance at the intended gate drive voltage (5V or 10V) to ensure efficiency targets are met within the operating temperature range.

Part Context

This part belongs to the DMN66 series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes the SOT363 (Standard) case outline, which is also referred to as SC-88 in some distributor catalogs. The device is designed to minimize on-state resistance while maintaining superior switching performance compared to previous generations.

Replacement Considerations

The automotive-compliant version is available under the separate part number DMN66D0LDWQ. Verify if AEC-Q qualification or PPAP capability is required for the target application before selecting the standard industrial grade part.

FAQ

What is the maximum gate-source voltage rating?

The continuous gate-source voltage (VGSS) is rated at ±20V.

Is the device suitable for automotive applications?

The standard DMN66D0LDW-7 is qualified to JEDEC standards. For automotive applications requiring specific change control, the Q-suffix part (DMN66D0LDWQ) should be used.