DMN66D0LDWQ-13

Overview

The DMN66D0LDWQ-13 is a dual N-channel enhancement mode MOSFET in an SOT363 package. It features a drain-source voltage of 60V and continuous drain current of 217mA at +25°C. The maximum on-resistance is 5Ω at VGS=10V and 6Ω at VGS=5V. Total power dissipation is 0.40W with a thermal resistance of 310°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration for space-efficient circuit design
• AEC-Q101 qualified for automotive reliability requirements
• ESD protected gate structure
• Totally lead-free and fully RoHS compliant

Applications

• Load Switch applications
• Automotive electronic systems
• General purpose switching circuits

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity, as the -13 suffix indicates a 10,000-unit tape and reel. Confirm that the component meets AEC-Q101 qualification standards if used in automotive contexts. Ensure the design accounts for the specified thermal resistance values under actual mounting conditions.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-current switching tasks. The device offers fast switching speeds and low input capacitance suitable for high-frequency operations. Consider the 60V breakdown voltage and 217mA current limits to ensure adequate headroom for the intended load.

Part Context

This part belongs to the DMN series of dual MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a small surface-mount SOT363 case. The product is designed to meet stringent automotive industry standards, including PPAP capability and IATF 16949 manufacturing certification.

Replacement Considerations

Check datasheets for other DMN series parts like DMN53D0LDW or DMN63D8LDW for potential pin-compatible alternatives with different voltage or resistance ratings.