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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT-523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：23 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN66D0LT-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 60 V and a continuous drain current (ID) of 115 mA at +25°C. The device exhibits a maximum static drain-source on-resistance (RDS(on)) of 5 Ω at VGS = 10 V and 6 Ω at VGS = 5 V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 200 mW in the SOT523 surface-mount package.
Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate rated at 1 kV (HBM)
- Totally lead-free and fully RoHS compliant
Applications
- Load switches
- Power management functions
- Motor controls
- PWM applications
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, including RoHS compliance and halogen-free specifications, as defined by the manufacturer's quality definitions. Ensure the selected part matches the exact electrical ratings needed for the target circuit design.
Selection Notes
Select this component when a compact single N-channel MOSFET is required for low-voltage switching applications. The SOT523 package provides a small footprint suitable for space-constrained designs. Evaluate the thermal resistance and power dissipation limits to ensure adequate heat management under continuous operating conditions.
Part Context
This component belongs to the DMN66 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series utilizes silicon technology and is designed for general-purpose switching tasks in consumer and industrial electronics.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference pinouts, electrical parameters, and package dimensions before implementation.
