ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 41V 60V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：210mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：821 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：260mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
Download product information
Overview
The DMN67D8LT-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 210mA at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 5.0Ω at VGS = 10V and 7.5Ω at VGS = 5V. Total power dissipation is rated at 260mW in steady state, with a thermal resistance (RθJA) of 497°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-state resistance for high efficiency
- Fast switching speed capability
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- Motor control circuits
- Power management functions
Procurement Notes
Verify the specific ordering suffix matches the required packaging quantity. The '-7' suffix indicates a tape and reel package containing 3000 units. Confirm that the SOT523 case style aligns with the target PCB footprint requirements. Ensure compliance with environmental directives such as RoHS 2 and RoHS 3 if applicable to the final assembly standards.
Selection Notes
Select this component when a compact single N-channel solution is required for low-current switching tasks. The SOT523 package provides space savings compared to larger transistor packages. Consider the 60V breakdown voltage and 210mA current limits to ensure adequate headroom for the intended load conditions and operating temperatures.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an SOT523 surface-mount case. The product is designed to balance low on-resistance with superior switching performance for efficient power management applications.
Replacement Considerations
Check datasheets for alternative parts offering similar 60V ratings and comparable RDS(ON) values within the SOT523 package. Verify pinout compatibility and thermal characteristics before substitution.
