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Product Detailed Parameters
- Description：MOSFET N-CH 800V 7A ITO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35.4 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1253 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：41W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ITO-220AB
- Package / Case：TO-220-3 Full Pack, Isolated Tab
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Overview
The DMN80H2D0SCTI is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-to-source voltage rating of 800 V and a continuous drain current of 7 A at case temperature. The device utilizes ITO-220AB packaging and operates with a gate drive voltage of 4 V at 250 µA. It has a maximum gate-source voltage of ±30 V. This component is currently designated as End of Life, scheduled for obsolescence.
Feature Summary
- High-voltage N-channel enhancement mode construction
- Robust 800 V drain-to-source blocking capability
- Suitable for high-power switching applications
Applications
- Industrial motor control systems
- High-voltage power supply circuits
- Automotive power management modules
Procurement Notes
Verify the End of Life status before integration into new designs. Confirm final availability windows with authorized distributors. Ensure legacy inventory suffices for production lifecycles. Validate pinout compatibility during transition planning. Review manufacturer obsolescence notices for timeline specifics.
Selection Notes
Select this component only if 800 V blocking voltage and 7 A current capacity align with circuit requirements. Consider thermal performance in the ITO-220AB package. Evaluate alternative active parts if long-term supply assurance is critical. Verify gate drive voltage compatibility with control logic.
Part Context
This part belongs to Diodes Incorporated's discrete semiconductor portfolio, specifically within the MOSFET category. It serves high-voltage switching needs in industrial and automotive sectors. The ITO-220AB package provides robust mechanical mounting and thermal dissipation for power electronics applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the End of Life status, engineers must identify equivalent components based on matching electrical parameters and package dimensions from other manufacturers.
