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Product Detailed Parameters
- Description：MOSFET N-CH 900V 2.5A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.9 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：470 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMN90H8D5HCT is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 900V and a continuous drain current (ID) of 2.5A at TC = +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 7Ω maximum at VGS = 10V and ID = 1A. The device utilizes a TO-220AB (Type TH) through-hole package with a total power dissipation rating of 125W at TC = +25°C. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low input capacitance for fast switching performance
- High BVDSS rating suitable for demanding power applications
- Low input/output leakage characteristics
- Lead-free finish compliant with RoHS directives
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify component authenticity against the manufacturer's official datasheet specifications before integration. Confirm that the TO-220AB (Type TH) package dimensions align with your PCB footprint requirements. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance. Validate compliance with applicable environmental regulations such as RoHS and halogen-free standards required for your specific manufacturing processes.
Selection Notes
Select this component when high voltage isolation up to 900V is required in a standard through-hole configuration. Consider the relatively high RDS(ON) value, which may necessitate careful thermal design for continuous conduction scenarios. Evaluate gate drive capabilities to ensure sufficient voltage levels are available to fully enhance the channel. Assess system constraints regarding peak pulsed currents and avalanche energy ratings during transient events.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is designed for general-purpose power switching applications requiring robust voltage handling. The product documentation indicates it is not recommended for new designs and has no alternate part number provided by the manufacturer.
Replacement Considerations
The datasheet explicitly states 'NO ALTERNATE PART' for this component. No public confirmed substitute part numbers are documented within the official specifications.
