DMNH10H028SPS-13

$1.47

Description：MOSFET N-CH 100V 40A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6d7f90425c6d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 40A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2245 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH10H028SPS-13

Overview

The DMNH10H028SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source breakdown voltage and a maximum continuous drain current of 40A at +25°C case temperature. The device exhibits a static drain-source on-resistance of 28mΩ at VGS=10V and ID=20A. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8 surface-mount package.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features 100% unclamped inductive switching capability for robust end applications
Designed with low input capacitance and fast switching speed for high conversion efficiency
Utilizes a thermally efficient package profile under 1.1mm for thin applications

Applications

Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the component meets RoHS 3 compliance standards and is halogen and antimony free. Ensure the application design accounts for the specified thermal resistance values when mounted on FR-4 substrate PCBs with minimum recommended pad layouts.

Selection Notes

Select this component for designs requiring high-efficiency power management where low on-state losses are critical. The device is suitable for applications demanding superior switching performance alongside high reliability. Consider the 100V rating and 40A continuous current capacity against the specific load requirements and thermal dissipation constraints of the target system architecture.

Part Context

This part belongs to the DMNH10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is distinct from automotive-compliant variants such as the DMNH10H028SPSQ. The component is designed to minimize on-state resistance while maintaining fast switching characteristics, targeting high-efficiency power conversion systems.