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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2245 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMNH10H028SPSQ-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 40A at TC = +25°C. The static drain-source on-resistance (RDS(ON)) is 28mΩ max at VGS = 10V and ID = 20A. The device supports an operating temperature range from -55°C to +175°C, with a total power dissipation of 1.6W at TC = +25°C.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% tested for unclamped inductive switching reliability
- Thermally efficient PowerDI5060-8 package design
- Low input capacitance and fast switching speed
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if intended for automotive assembly lines. Ensure the final part number aligns with IATF 16949 certified manufacturing facilities for quality assurance compliance.
Selection Notes
Select this component for high ambient temperature environments requiring robust inductive switching performance. The low RDS(ON) minimizes conduction losses, while the thin profile suits space-constrained designs. Evaluate thermal resistance values against the specific PCB copper area and duty cycle requirements to ensure safe junction temperatures under load.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, designed for stringent reliability standards. It utilizes silicon technology within a molded plastic green molding compound package. The device is lead-free, halogen-free, and antimony-free, complying with RoHS directives for environmentally conscious electronic assemblies.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-reference pin configurations and electrical parameters carefully before implementation.
